Epitaxial, ferromagnetic Cu2-x Mnx O films on (001) Si by near-room-temperature electrodeposition

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Liu, Y L ^a   Harrington, S ^a   Yates, K A ^a   Wei, M ^a   Blamire, M G ^a   MacManus Driscoll, J L ^a   Liu, Y C ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRODEPOSITION; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FILM GROWTH; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; PHOTOLUMINESCENCE; SILICON; THERMAL EFFECTS; THIN FILMS;

DILUTE MAGNETIC SEMICONDUCTORS; LATTICE SITES; PHOTOLUMINSCENCE MEASUREMENTS; UNDOPED FILMS;

COPPER COMPOUNDS;

EID: 27944465266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136349     Document Type: Article

References (21)

1. K. R. Kittilstved, N. S. Norberg, and D. R. Gamelin, Phys. Rev. Lett. 94, 147209 (2005).
2. J. S. Lee, J. D. Lim, Z. G. Khim, Y. D. Park, S. J. Pearton, and S. N. G. Chu, J. Appl. Phys. 93, 4512 (2003).
3. J. M. D. Coey, J. Appl. Phys. 97, 10D313 (2005).
4. P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. O. Guillen, B. Johansson, and G. A. Gehring, Nat. Mater. 2, 673 (2003).
5. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, Science 291, 854 (2001).
6. J. Philip, N. Theodoropoulou, G. Berera, J. S. Moodera, and B. Satpati, Appl. Phys. Lett. 85, 777 (2004).
7. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
8. S. N. Kale, S. B. Ogale, S. R. Shinde, M. Sahasrabuddhe, V. N. Kulkarni, R. L. Greene, and T. Venkatesan, Appl. Phys. Lett. 82, 2100 (2003).
9. M. Ivill, M. E. Overberg, C. R. Abernathy, D. P. Norton, A. F. Hebard, N. Theodoropoulou, and J. D. Budai, Solid-State Electron. 47, 2215 (2003).
10. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, J. Appl. Phys. 93, 1 (2003).
11. M. Wei, N. Braddon, D. Zhi, P. A. Midgley, S. K. Chen, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 072514 (2005).
12. L. Pan, H. Zhu, C. Fan, W. Wang, Y. Zhang, and J. Q. Xiao, J. Appl. Phys. 97, 10D318 (2005).
13. A. K. Pradhan, Kai Zhang, S. Mohanty, J. B. Dadson, D. Hunter, Jun Zhang, D. J. Sellmyer, U. N. Roy, Y. Cui, A. Burger, S. Mathews, B. Joseph, B. R. Sekhar, and B. K. Roul, Appl. Phys. Lett. 86, 152511 (2005).
14. M. Nazmul, S. Ahsan, and M. Tanaka, Cond-mat. 0208299 (2002).
15. F. Oba, F. Ernst, Y. S. Yu, R. Liu, M. Kothari, and J. A. Switzer, J. Am. Chem. Soc. 88, 253 (2005).
16. J. A. Switzer, R. Liu, E. W. Bohannan, and F. Ernst, J. Phys. Chem. B 106, 12369 (2002).
17. M. Miyake, K. Murase, T. Hirato, and Y. Awakura, J. Electrochem. Soc. 150, C413 (2003).
18. M. Miyake, K. Murase, T. Hirato, and Y. Awakura, J. Electroanal. Chem. 562, 247 (2004).
19. T. Ito and T. Masumi, J. Phys. Soc. Jpn. 66, 2185 (1997).
20. J. Bloem, A. J. wan der Houven van Oordt, and F. A. Kroger, Physica (Amsterdam) 22, 1254 (1956).
21. C. Duvvury, D. J. Kenway, and F. L. Weichman, J. Lumin. 10, 415 (1975).