Stripping Hall effect, sheet and spreading resistance techniques for electrical evaluation of implanted silicon layers

Microelectronic Engineering

Volumn 40, Issue 3-4, 1998, Pages 275-284

  Boussey, Jumana ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; HALL EFFECT; ION IMPLANTATION;

SPREADING RESISTANCE TECHNIQUES; STRIPPING HALL EFFECT TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0032206716     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00277-9     Document Type: Article

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