Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 434-439

  Villaret, A ^a   Ranica, R ^a   Masson, P ^b   Malinge, P ^a   Mazoyer, P ^a   Candelier, P ^a   Jacquet, F ^a   Cristoloveanu, S ^c   Skotnicki, T ^a  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; EQUIVALENT CIRCUITS; IMPACT IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTOR DIODES; THERMODYNAMICS;

CHARGE MODULATION; JUNCTION CURRENTS;

MOSFET DEVICES;

EID: 1642603043     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.026     Document Type: Conference Paper

References (8)

1. Tack M.R., Gao M., Claeys C.L., Declerck G.J. IEEE T. Electron Dev. 37(5):1990;1373-1382.
2. A. Villaret, R. Ranica et al., in: Proceedings of the VLSI Nanoworkshop, 2003.
3. T. Ohsawa, US Patent No. 0051378 A1 (2002).
4. S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan, in: IEEE International SOI Conference, 2001.
5. Okhonin S., Nagoga M., Sallese J.M., Fazan P. IEEE Electron Dev. Lett. 23(2):2002.
6. K. Inoh, et al., in: Symposium on VLSI Technology Technical Digest Proceedings, 2003.
7. C. Kuo, T.-J. King, C. Hu, in: IEDM Tech. Dig., 2002, p. 843.
8. Sze S.M. Physics of Semiconductor Devices. second ed. 1981;Wiley Interscience, New York.