PbTi O3 content dependence of crystal structure and electrical properties of (100)-/(001)-oriented epitaxial Pb (Mg13 Nb23) O3 -PbTi O3 films grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Yokoyama, Shintaro ^a   Okamoto, Satoshi ^a   Okamoto, Shoji ^a   Funakubo, Hiroshi ^a   Matsuda, Hirofumi ^b   Iijima, Takashi ^b   Saito, Keisuke ^c   Okino, Hirotake ^d   Yamamoto, Takashi ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c BRUKER AXS INC   (United States)

^d NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MIXED PHASE REGION; PBTI O3; PIEZOELECTRIC COEFFICIENT; RHOMBOHEDRAL PHASES;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIXTURES; PERMITTIVITY; SINGLE CRYSTALS; SINTERING; THIN FILMS;

LEAD COMPOUNDS;

EID: 27744559990     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2123367     Document Type: Article

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