Complete spin polarization of electrons in semiconductor layers and quantum dots

Applied Physics Letters

Volumn 87, Issue 20, 2005, Pages 1-3

  Osipov, V V ^a,b   Petukhov, A G ^c   Smelyanskiy, V N ^b  

^a New Physics Devices   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

^c SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL SPIN INJECTION; SEMICONDUCTOR LAYERS; SPIN POLARIZATION;

MAGNETIZATION; POLARIZATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONS;

EID: 27744556196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2128060     Document Type: Article

References (25)

1. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).
2. Semiconductor Spintronics and Quantum Computation, edited by, D. D. Awschalom, D. Loss, and, N. Samarth, (Springer, Berlin, 2002).
3. S. Datta and B. Das, Appl. Phys. Lett. 0003-6951 10.1063/1.102730 56, 665 (1990); S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, Phys. Rev. B 60, 7764 (1999).
4. S. Datta and B. Das, Appl. Phys. Lett. 0003-6951 10.1063/1.102730 56, 665 (1990); S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, Phys. Rev. B 60, 7764 (1999).
5. R. Sato and K. Mizushima, Appl. Phys. Lett. 0003-6951 10.1063/1.1397257 79, 1157 (2001); X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. S. Solomon, J. Harris, and S. S. P. Parkin, Phys. Rev. Lett. 90, 256603 (2003).
6. R. Sato and K. Mizushima, Appl. Phys. Lett. 0003-6951 10.1063/1.1397257 79, 1157 (2001); X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. S. Solomon, J. Harris, and S. S. P. Parkin, Phys. Rev. Lett. 90, 256603 (2003).
7. V. V. Osipov and A. M. Bratkovsky, Appl. Phys. Lett. 0003-6951 10.1063/1.1667002 84, 2118 (2004); A. M. Bratkovsky and V. V. Osipov, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.098302 92, 098302 (2004); A. M. Bratkovsky and V. V. Osipov, Appl. Phys. A: Mater. Sci. Process. 80, 1 (2005).
8. V. V. Osipov and A. M. Bratkovsky, Appl. Phys. Lett. 0003-6951 10.1063/1.1667002 84, 2118 (2004); A. M. Bratkovsky and V. V. Osipov, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.098302 92, 098302 (2004); A. M. Bratkovsky and V. V. Osipov, Appl. Phys. A: Mater. Sci. Process. 80, 1 (2005).
9. V. V. Osipov and A. M. Bratkovsky, Appl. Phys. Lett. 0003-6951 10.1063/1.1667002 84, 2118 (2004); A. M. Bratkovsky and V. V. Osipov, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.098302 92, 098302 (2004); A. M. Bratkovsky and V. V. Osipov, Appl. Phys. A: Mater. Sci. Process. 80, 1 (2005).
10. M. A. Nielsen and I. L. Chuang, Quantum Computation and Quantum Information (Cambridge University Press, Cambridge, UK, 2000).
11. A. G. Aronov and G. E. Pikus, Fiz. Tekh. Poluprovodn. (St.-Petersburg) 0015-3222 10, 1177 (1976) A. G. Aronov and G. E. Pikus, [Sov. Phys. Semicond. 10, 698 (1976)].
12. A. G. Aronov and G. E. Pikus, Fiz. Tekh. Poluprovodn. (St.-Petersburg) 0015-3222 10, 1177 (1976) A. G. Aronov and G. E. Pikus, [Sov. Phys. Semicond. 10, 698 (1976)].
13. M. Johnson and R. H. Silsbee, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.4959 35, 4959 (1987); M. Johnson and J. Byers, Phys. Rev. B 67, 125112 (2003).
14. M. Johnson and R. H. Silsbee, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.4959 35, 4959 (1987); M. Johnson and J. Byers, Phys. Rev. B 67, 125112 (2003).
15. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
16. Z. G. Yu and M. E. Flatte, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.201202 66, 201202 (2002); Z. G. Yu and M. E. Flatte, Phys. Rev. B 66, 235302 (2002).
17. Z. G. Yu and M. E. Flatte, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.201202 66, 201202 (2002); Z. G. Yu and M. E. Flatte, Phys. Rev. B 66, 235302 (2002).
18. V. V. Osipov and A. M. Bratkovsky, Phys. Rev. B 70, 205312 (2004).
19. A. M. Bratkovsky and V. V. Osipov, J. Appl. Phys. 96, 4525 (2004).
20. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 0003-6951 10.1063/1.1449530 80, 1240 (2002); A. T. Hanbicki, O. M. J. van't Erve, R. Magno, G. Kioseoglou, C. H. Li, and B. T. Jonker, Appl. Phys. Lett. 82, 4092 (2003).
21. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 0003-6951 10.1063/1.1449530 80, 1240 (2002); A. T. Hanbicki, O. M. J. van't Erve, R. Magno, G. Kioseoglou, C. H. Li, and B. T. Jonker, Appl. Phys. Lett. 82, 4092 (2003).
22. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
23. I. Zutic, J. Fabian, and S. Das Sarma, Phys. Rev. Lett. 88, 066603 (2002).
24. V. V. Osipov and A. M. Bratkovsky, cond-mat/0504494 (2005).
25. H. Ohno, K. Yoh, K. Sueoka, K. Mukasa, A. Kawaharazuka, and M. E. Ramsteiner, Jpn. J. Appl. Phys., Part 2 42, L1 (2003).