200-mm wafer-scale transfer of 0.18-μm dual-damascene Cu/SiO2 interconnection system to plastic substrates

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 802-804

  Teh, Weng Hong ^a   Lihui, Guo ^b   Kumar, R ^b   Kwong, D L ^b  

^a INTEL CORPORATION   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Semiconductor device bonding; Semiconductor device fabrication; Silicon on insulator (SOI); Substrate transfer

Indexed keywords

ADHESION; BONDING; COPPER; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; WSI CIRCUITS;

PLASTIC SUBSTRATES; SEMICONDUCTING DEVICE BONDING; SUBSTRATE TRANSFER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 27744473327     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857734     Document Type: Article

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