Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well

Applied Physics Letters

Volumn 87, Issue 20, 2005, Pages 1-3

  Zhang, X B ^a   Ryou, J H ^a   Dupuis, R D ^a   Walter, G ^b   Holonyak Jr , N ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; TEMPERATURE-DEPENDENT LUMINISCENCE; TENSILE STRAIN; THERMALIZATION;

CATHODOLUMINESCENCE; LUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27744436606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132529     Document Type: Article

References (13)

1. For example, see M. Grundmann, Nano-Optoelectronics (Springer, Berlin, 2002), pp. 299-390.
2. Y. Arakawa, and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
3. M. Asada, Q. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. QE-22, 1915 (1986).
4. G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, Electron. Lett. 35, 1163 (1999).
5. G. Walter, N. Holonyak, Jr., J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 79, 3215 (2001).
6. G. Walter, N. Holonyak, Jr., R. D. Heller, and R. D. Dupuis, Appl. Phys. Lett. 81, 4604 (2002).
7. T. Chuang, G. Walter, and N. Holonyak, Jr., Appl. Phys. Lett. 79, 4500 (2001).
8. S. L. Chuang, and N. Holonyak, Jr., Appl. Phys. Lett. 80, 1270 (2002).
9. X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak, Jr., Appl. Phys. Lett. 82, 4343 (2003).
10. X. B. Zhang and R. D. Dupuis, Encyclopedia of Nanoscience and Nanotechnology, edited by, J. A. Schwarz, C. Contescu, and, K. Putyera, (Marcel Dekker, New York, 2004), p. 3873.
11. M. Sopanen, H. Lipsanen, and J. Ahopelto, Appl. Phys. Lett. 66, 2364 (1995).
12. S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).
13. T. Ishikawa and J. E. Bowers, IEEE J. Quantum Electron. 30, 562 (1994).