Low temperature chemical vapor deposition of 3C-SiC on Si substrates

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 201-204

  Forster Ch ^a   Cimalla, V ^a   Ambacher, O ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

3C SiC; Chemical vapor deposition; Low temperature

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; STRUCTURAL PROPERTIES; X RAY DIFFRACTION;

LAYER THICKNESS; VISIBLE ELLIPSOMETRY;

SILICON CARBIDE;

EID: 27744434752     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.201     Document Type: Conference Paper

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