Laser thermometry of solids in plasma (Review)

Instruments and Experimental Techniques

Volumn 43, Issue 2, 2000, Pages 149-172

  Magunov, A N ^a  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27644599194     PISSN: 00204412     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02759200     Document Type: Review

References (110)

1. Shohet, J.L., Abstracts of Papers, Int. School Plasma Phys. "Piero Caldirola," Bonizzoni, G., Hooke, W., and Sindoni, E., Eds., SIF, Bologna, 1993, p. 47.
2. Magunov, A.N., Heat Transfer from Nonequilibrium Plasmas to Surfaces, Doctoral (Phys.-Math.) Dissertation, Moscow: Inst. of General Phys., Russ. Acad. Sci., 1996.
3. Barna, G.G., Moslehi, M.M., and Lee, Y.J., Sol. St. Technol., 1994, vol. 37, no. 4, p. 57.
4. Kessels, W.M.M., Severens, R.J., Van de Sanden, R., and Schram, D.C., J. Non-Cryst. Solids, 1998, vol. 227-230, p. 133.
5. Wilson, R.J. and Weiss, B.L., Vacuum, 1991, vol. 42, no. 12, p. 719.
6. Keaton, A.L. and Hess, D.W., J. Vac. Sci. Technol. B, 1988, vol. 6, no. 1, p. 72.
7. Matsuda, A., Abstracts of Papers, Int. School Plasma Phys. "Piero Caldirola," Bonizzoni, G., Hooke, W., and Sindoni, E., Eds., SIF, Bologna, 1993, p. 405.
8. Handbook of Thin Film Technology, Maissel, L.I. and Glang, R., Eds., New York: McGraw-Hill, 1970.
9. Translated under the title Tekhnologiya tonkikh plenok, Moscow: Sov. Radio, 1977.
10. Lukin, O.V. and Magunov, A.N., Mikroelektronika, 1998, vol. 27, no. 6, p. 440.
11. Visser, R.J., J. Vac. Sci. Technol. A, 1989, vol. 7, no. 2, p. 189.
12. Steffen, H., Kersten, H., and Wulff, H., J. Vac. Sci. Technol. A, 1994, vol. 12, no. 5, p. 2780.
13. Kersten, H., Snijkers, R.J.M.M., Schulze, J., et al., Appl. Phys. Lett., 1994, vol. 64, no. 12, p. 1496.
14. Ausiello, O., Ibbotson, D.E., and Flamm, D.L., Nucl. Instrum. Methods Phys. Res., Sect. B, 1987, vol. 23, p. 419.
15. Sazanov, Yu.N., Termicheskii analiz organicheskikh soedinenii (Thermal Analysis of Organic Compounds), Leningrad: Nauka, 1991.
16. Harshbarger, W.R., Plasma Processing for VLSI, Einspruch, N.G. and Brown, D.M., Eds., Orlando: Academic, 1984, ch. 11.
17. Translated under the title Plazmennaya tekhnologiya v proizvodstve SBIS, Moscow: Mir, 1987.
18. Korotchenko, V. and Matthews, A., Vacuum, 1988, vol. 36, no. 1-3, p. 61.
19. Shenfeld, O., Belotserkovsky, E., Goldwasser, B., et al., Opt. Eng., 1993, vol. 32, no. 2, p. 216.
20. Wong, P.Y., Hess, C.K., and Miaoulis, J.N., Opt. Eng., 1995, vol. 34, no. 6, p. 1776.
21. Egerton, E.J., Nef, A., Millikin, W., et al., Sol. St. Technol., 1982, vol. 25, no. 2, p. 84.
22. Hussla, I., Enke, K., Grünwald, H., et al., J. Phys. D: Appl. Phys., 1987, vol. 20, p. 889.
23. Magunov, A.N., Lukin, O.V., Mal'shakov, V.G., and Popov, A.A., Trudy FTIAN (Proceedings of Physicotechnical Inst., RAS), Moscow: Nauka, 1997, vol. 12, p. 99.
24. Danilin, B.S., Kireev, V.Yu., Kaplin, V.A., and Vrublevskii, E.M., Prib. Tekh. Eksp., 1982, no. 1, p. 13.
25. Gottscho, R.A. and Miller, T.A., Pure&Appl. Chem., 1984, vol. 56, no. 2, p. 189.
26. Deshmukh, V.G.I, and Cox, T.I., Plasma Phys. Controlled Fusion, 1988, vol. 30, no. 1, p. 21.
27. Koch, A.W., Abstracts of Papers, Int. School Plasma Phys. "Piero Caldirola," Bonizzoni, G., Hooke, W., and Sindoni, E., Eds., SIF, Bologna, 1993, p. 377.
28. Magunov, A.N., Prib. Tekh. Eksp., 1995, no. 5, p. 131.
29. Magunov, A.N., Pis'ma Zh. Tekh. Fiz., 1992, vol. 18, no. 23, p. 1.
30. Magunov, A.N. and Lukin, O.V., Mikroelektronika, 1996, vol. 25, no. 2, p. 97.
31. Olson, G.L. and Roth, J.A., Materials Sci. Repts., 1988, vol. 3, no. 1, p. 1.
32. Sturm, J.C., Schwartz, P.V., and Garone, P.M., Appl. Phys. Lett., 1990, vol. 56, no. 10, p. 961.
33. Magunov, A.N., Prib. Tekh. Eksp., 1998, no. 3, p. 6.
34. Donnelly, V.M., Ibbotson, D.E., and Chang, C.-P., J. Vac. Sci. Technol. A, 1992, vol. 10, no. 4, part 1, p. 1060.
35. Lukin, O.V. and Magunov, A.N., Mikroelektronika, 1995, vol. 24, no. 2, p. 119.
36. Magunov, A.N., Fiz. Plazmy, 1997, vol. 23, no. 11, p. 1018.
37. Magunov, A.N., Pis'ma Zh. Tekh. Fiz., 1995, vol. 21, no. 5, p. 44.
38. Moreau, W.M., Semiconductor Lithography, New York: Plenum, 1988.
39. Translated under the title Mikrolitografiya, Moscow: Mir, 1990.
40. Durandet, A., Joubert, O., Pelletier, I., and Pichot, M., J. Appl. Phys., 1990, vol. 67, no. 8, p. 3862.
41. Joubert, O., Paniez, P., Pons, M., and Pelletier, J., J. Appl. Phys., 1991, vol. 70, no. 2, p. 977.
42. Zaidi, S.H., Brueck, S.R.J., and McNeil, J.R., J. Vac. Sci. Technol. B, 1992, vol. 10, no. 1, p. 166.
43. Lang, M.K., Donohoe, G.W., Zaidi, S.H., and Brueck, S.R.J., Opt. Eng., 1994, vol. 33, no. 10, p. 3465.
44. Hercher, M., Wyntjes, G., and DeWeerd, H., Proc. SPIE-Int. Soc. Opt. Eng., 1987, vol. 746, p. 187.
45. Voorhes, D.W. and Hall, D.M., Proc. SPIE-Int. Soc. Opt. Eng., 1991, vol. 1595, p. 61.
46. Kizel', V.A., Otrazhenie sveta (Light Reflection), Moscow: Nauka, 1973.
47. Timans, P.J., McMahon, R.A., and Ahmed, H., J. Appl. Phys., 1989, vol. 66, no. 6, p. 2285.
48. Qiu, T.Q., Grigoropoulos, C.P., and Tien, C.L., Expertin. Heat Transfer, 1993, vol. 6, p. 231.
49. Lee, A.S. and Norris, P.M., Rev. Sci. Instrum., 1997, vol. 68, no. 2, p. 1307.
50. Grosse, P., Freie Elektronen in Festkörpern, Berlin: Springer, 1979.
51. Translated under the title Svobodnye elektrony v tverdykh telakh, Moscow: Mir, 1982.
52. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, Amsterdam: North-Holland, 1977.
53. Translated under the title Ellipsometriya i polyarizovannyi svet, Moscow: Mir, 1981.
54. Ibrahim, M.M. and Bashara, N.M., J. Vac. Sci. Technol., 1972, vol. 9, p. 1259.
55. Baklanov, M.R., Svitashev, K.K., Semenenko, L.V., and Sokolov, V.K., Opt. Spektrosk., 1975, vol. 39, no. 2, p. 362.
56. Tomita, T., Kinosada, T., Yamashita, T., et al., Jpn. J. Appl. Phys., 1986, vol. 25, no. 11, p. 925.
57. Kroesen, G.M.W., Oehrlein, G.S., and Bestwick, T.D., J. Appl. Phys., 1991, vol. 69, no. 5, p. 3390.
58. Mardezhov, A.S., Chikichev, S.I., and Shvets, V.A., Sb. Ellipsometriya: teoriya, metody, prilozheniya (Collection "Ellipsometry: Theory, Methods, Applications"), Svitashev, K.K. and Mardezhov, A.S., Eds., Novosibirsk: Nauka, 1991, p. 127.
59. Hansen, G.P., Krishnan, S., Hauge, R.H., and Margrave, J.L., Appl. Opt., 1989, vol. 28, no. 10, p. 1885.
60. Sokolovskaya, A.I., Kudryavtseva, A.D., and Brekhovskikh, G.L., Trudy Lebedev Fiz. Inst. Akad. Nauk SSSR, 1991, vol. 212, p. 16.
61. Pazionis, G.D., Tang, H., and Herman, I.P., IEEE J. Quant. Electron., 1989, vol. 25, p. 976.
62. LaPlant, F., Laurence, G., and Ben-Amotz, D., Appl. Spectrosc., 1996, vol. 50, p. 1034.
63. Dai, S., Young, J.P., Begun, G.M., and Mamantov, G., Appl. Spectrosc., 1992, vol. 46, p. 375.
64. Jellison, G.E., Jr., Lowdnes, D.H., and Wood, R.F., Phys. Rev. B: Condens. Matter, 1983, vol. 28, no. 6, p. 3272.
65. Pankove, J.I., Optical Processes in Semiconductors, NJ: Prentice-Hall, 1971.
66. Translated under the title Opticheskie protsessy v poluprovodnikakh, Moscow: Mir, 1973.
67. Zhang, W, Lu, X., Wang, X., et al., J. Lumin., 1988, vol. 40-41, p. 850.
68. Allison, S.W. and Gillies, G.T., Rev. Sci. Instrum., 1997, vol. 68, no. 7, p. 2615.
69. Grattan, K.T.W. and Palmer, A.W., Rev. Sci. Instrum., 1985, vol. 56, no. 9, p. 1784.
70. Baggerman, J.A.G., Visser, R.J., and Collart, E.J.H., J. Appl. Phys., 1994, vol. 75, no. 2, p. 758.
71. Van Delft, F.C.M.J.M. and Giesbers, J.B., Microelectron. Eng., 1998, vol. 41/42, p. 387.
72. Daviet, J.-F., Peccoud, L., and Mondon, F., J. Appl. Phys., 1993, vol. 73, no. 3, p. 1471.
73. Anderson, R.L., Proc. SPIE-Int. Soc. Opt. Eng., 1990, vol. 1392, p. 437.
74. Kolodner, P., Katzir, A., and Hartsough, N., Appl. Phys. Lett., 1983, vol. 42, no. 4, p. 749.
75. Wilhelm, B., Janssen, M., Romano, V., et al., VDI Berichte, Temperatur'98, 1998, vol. 1379, p. 133.
76. Gasilov, A.Yu., Magunov, A.N., Makoviichuk, M.I., et al., Abstracs of Papers, I Ross. konf. po fizike poluprovodnikov (I Russian Conf. on Semiconductor Phys.), N.-Novgorod, 1993, p. 225.
77. Holm, R.T., McKnight, S.W., Palik, E.D., and Lukosz, W., Appl. Opt., 1982, vol. 21, no. 14, p. 2512.
78. 2 Layers on Silicon), Leningrad: Len. Gos. Univ., 1988.
79. Akhmanov, S.A., Emel'yanov, V.I., Koroteev, N.I., and Seminogov, V.N., Usp. Fiz. Nauk, 1985, vol. 147, no. 4, p. 675.
80. Hicks, J.M., Urbach, L.E., Plummer, E.W., and Dai, H.-L., Proc. SPIE-Int. Soc. Opt. Eng., 1990, vol. 1208, p. 127.
81. Pedanekar, N.R., Yin, H., and Laurendeau, N.M., Appl. Opt., 1996, vol. 35, no. 21, p. 4169.
82. Born, M. and Wolf, E., Principles of Optics, Oxford, 1968.
83. Translated under the title Osnovy optiki, Moscow: Nauka, 1970.
84. Merkulov, S.V. and Magunov, A.N., Frontiers in Low Temperature Plasma Diagnostics III, Saillon, Switzerland, 1999, Book of Papers, Ecole Polytechnique Federale de Lausanne, 1999, p. 101.
85. Magunov, A.N., Buyanovskaya, P.G., Gasilov, A.Yu., and Preobrazhenskii, M.N., Opt. Spectrosc., 1998, vol. 84, no. 1, p. 68.
86. Magunov, A.N. and Gasilov, A.Yu., Mikroelektronika, 1997, vol. 26, no. 5, p. 384.
87. Gasilov, A.Yu. and Magunov, A.N., Zavod. Lab., 1997, vol. 63, no. 8, p. 32.
88. Golubev, A.N., Opt. Tekhn., 1995, no. 4, p. 40.
89. Grivitskas, V.V., Abraitis, V.B., Amstibovskii, V.V., et al., Registratsiya geometricheskoi neodnorodnosti kremnievykh plastin pri pomoshchi panoramnoi interferometrii (Recording of Geometric Inhomogeneity of Silicon Wafers with Panoramic Interferometry), Vilnius: Vil'nyus. Univ., 1990.
90. Mantz, A.W., Spectrochimica Acta Pt. A, 1995, vol. 51, p. 2211.
91. Baikov, I.S. and Bezotosnyi, V.V., Prikl. Fiz., 1995, no. 2, p. 3.
92. Johnson, S.R., Lavoie, C., Tiedje, T., and Mackenzie, J.A., J. Vac. Sci. Technol. B, 1993, vol. 11, no. 3, p. 1007.
93. Pearsall, T.P., Saban, S.R., Booth, J., et al., Rev. Sci. Instrum., 1995, vol. 66, no. 10, p. 4977.
94. Wang, Z., Kwan, S.L., Pearsall, T.P., et al., J. Vac. Sci. Technol. B, 1997, vol. 15, no. 1, p. 116.
95. Tkharcv, E.E. and Danilyuk, A.L., Vacuum, 1985, vol. 35, no. 4-5, p. 183.
96. Soref, R.A. and Bennett, B.R., IEEE J. Quant. Electron., 1987, vol. 23, no. 1, p. 123.
97. Bond, R.A., Dzioba, S., and Naguib, H.M., J. Vac. Sci. Technol., 1981, vol. 18, no. 2, p. 335.
98. Magunov, A.N., Pis'ma Zh. Tekh. Fiz., 1992, vol. 18, no. 10, p. 44.
99. Foissac, C., Supiot, P., Dessaux, O., and Goudmand, P., Abstracts of Papers, XXIV ICPIG, Warsaw, Poland, 1999, vol. 2, p. 7.
100. Horiike, Y. and Shibagaki, M., Jpn. J. Appl. Phys., 1976, vol. 15, suppl. 1, p. 13.
101. Magunov, A.N., Pis'ma Zh. Tekh. Fiz., 1994, vol. 20, no. 4, p. 36.
102. Magunov, A.N. and Lukin, O.V., Abstracts of Papers, XIII ESCAMPIG, Europhys. Conf. Poprad, Slovakia, 1996, vol. 20E, part B, p. 319.
103. Magunov, A.N., Fiz, Plazmy, 1999, vol. 25, no. 8, p. 704.
104. Magunov, A.N., Pis'ma Zh. Tekh. Fiz., 1994, vol. 20, no. 7, p. 65.
105. Adel, M.E., Ish-Shalom, Ya., Mangan, S., et al., Proc. SPIE-Int. Soc. Opt. Eng., 1992, vol. 1803, p. 290.
106. Fei, Yu., Chen, Ya., Ma, X., and Shen, Yu., Proc. SPIE, 1998, vol. 3558, p. 87.
107. Kurosaki, R., Kikuchi, J., Kobayashi, Ya., et al., Proc. SPIE-Int. Soc. Opt. Eng., 1995, vol. 2635, p. 224.
108. Swinkels, G. and Kroesen, G., Frontiers in Low Temperature Plasma Diagnostics III, Saillon, Switzerland, 1999, Book of Papers, Ecole Polytechnique Federale de Lausanne, 1999, p. 199.
109. Nizkotemperaturnaya plazma. Plazmokhimicheskaya tekhnologiya (Low-Temperature Plasma. Plasmochemical Technology), Parkhomenko, V.D. and Tret'yakov, Yu.D., Eds., Novosibirsk: Nauka, 1991, vol. 4.
110. Large Bandgap Electronic Materials and Components, Proc. IEEE, 1991, vol. 79, no. 5, p. 595.