Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 116-121

  Wang, Zhongze ^a   Kwan, Siu L ^a   Pearsall, T P ^a   Booth, J L ^b   Beard, B T ^b   Johnson, S R ^c  

^a University of Washington   (United States)

^b Thermionics NW Inc   (United States)

^c UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CONTROL; LIGHT REFLECTION; POLYNOMIALS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SYSTEM STABILITY; TEMPERATURE CONTROL; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THREE TERM CONTROL SYSTEMS;

BLACKBODY RADIATION; DIFFUSIVE REFLECTANCE SPECTROSCOPY; HEATER TEMPERATURE; WAFER TEMPERATURE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 3943051445     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589235     Document Type: Article

References (20)

1. T. P. Pearsall, Proc. Symp. Tech. and Proc. of Compound Semiconductors SOTAPOCS XX (Electrochemical Society, Pennington, NJ, 1995), Vol. 94-18, p. 286.
2. F. G. Boebel and H. Moller, Proceedings of the IEEE/SEMI Advanced Semiconductor Manufacturing Conference 67, 1992 (unpublished).
3. B. Peuse and A. Rosekrans, Mater. Res. Soc. Symp. Proc. 303, 125 (1993).
4. D. W. Voorhees and D. M. Hall, Proc. SPIE 1595, 61 (1991).
5. K. A. Conrad, R. K. Sampson, H. Z. Massoud, and E. A. Irene, J. Vac. Sci. Technol. B 11, 2096 (1993).
6. G. P. Hansen, S. Krishnan, R. H. Hauge, and J. L. Margrave, Appl. Opt. 28, 1885 (1989).
7. D. S. Katzer and B. V. Shanabrook, J. Vac. Sci. Technol. B 11, 103 (1993).
8. S. C. Malam. T. Pell, and R. M. Nix, J. Vac. Sci. Technol. A 12, 2938 (1994).
9. D. R. Wright, W. D. Clark, D. C. Hartman, U. C. Sridharan, M. Kent, and R. Kerns, Proc. SPIE 1803, 321 (1993).
10. E. S. Hellman and J. S. Harris, Jr., J. Cryst. Growth 81, 38 (1986).
11. M. K. Weilmeier, K. M. Colbow, T. Tiedje, T. van Buuren, and Li Xu, Can. J. Phys. 69, 422 (1991).
12. M. E. Adel, Y. Ish-Shalom, S. Mangan. D. Carlo, and H. Gilboa, Proc. SPIE 1803, 290 (1992).
13. S. R. Johnson, C. Lavoie, T. Tiedje, and J. A. Mackenzie, J. Vac. Sci. Technol. B 11, 1007 (1993).
14. T. P. Pearsall, S. R. Saban, J. Booth, B. T. Beard, Jr., and S. R. Johnson, Rev. Sci. Instrum. 66, 4977 (1995).
15. A. L. Companion, in Developments in Applied Speclmscopy 4, edited by E. N. Davis (Plenum, New York, 1965), p. 221.
16. Y. P. Varshni, Physica 34, 149 (1967).
17. C. D. Thurmond, J. Electrochem Soc. 122, 1133 (1975).
18. S. R. Johnson, C. Lavoie, M. Nissen, and T. Tiedje, U.S. Patent No. 5,388,909 (1994).
19. H. Shen, S. H. Pan, Z. Hang, Jing Leng, F. H. Pollak, J. M. Woodall, and R. N. Sacks, Appl. Phys. Lett. 53, 1080 (1988).
20. T. J. DeLyon, J. A Roth, and D. H. Chow, Extended Abstracts 38th Electronic Materials Conference, Santa Barbara, CA, 28 June, 1996 (unpublished), paper DD-1, p. 63.