Design method for high efficiency class F HBT amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 855-858

  Mallet, A ^a   Peyretaillade, T ^a   Sommet, R ^a   Floriot, D ^a   Delage, S ^a   Nebus, J M ^a   Obregon, J ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; MATHEMATICAL MODELS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

BIAS MODES; LARGE SIGNAL ANALYSIS; POWER ADDED EFFICIENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029696918     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)