IMD sweet-spot control on junction FET devices using a gate bias resistor

Conference Proceedings- European Microwave Conference

Volumn 2, Issue , 2004, Pages 561-564

  Gómez, Carmen ^a   García, José A ^a   Pedro, José C ^b  

^a UNIVERSITY OF CANTABRIA   (Spain)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); DIGITAL COMMUNICATION SYSTEMS; DISTORTION (WAVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; GATES (TRANSISTOR); RESISTORS;

DC CURRENT; GATE BIAS RESISTORS; INTERMODULATION DISTORTION (IMD); RADIO FREQUENCY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 18744391731     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. P. B. Kenington, High-Linearity RF Amplifier Design, Artech-House, Norwood, 2000.
2. P. M. Cabral, N. B. Carvalho and J. C. Pedro, "An Integrated View of Nonlinear Distortion Phenomena in Various Amplifier Technologies", Proceeding of GaAs Symposium, pp. 69-72, Munich, Oct. 2003.
3. N. B. Carvalho, and J. C. Pedro, "Large- and Small-Signal IMD Behavior of Microwave Power Amplifiers," IEEE Trans. Microwave Theory Tech., vol. MTT-47, pp. 2364-74, Dec. 1999.
4. F. Palomba, M. Pagani, et al., "Process-tolerant High Linearity MMIC Power Amplifiers," Proceeding of GaAs Symposium, pp. 73-76, Munich, Oct. 2003.
5. E. Malaver, J. A. Garcia, A. Tazón and A. Mediavilla, "Characterizing the Linearity Sweet-Spot Evolution in FET Devices", Proceeding of GaAs Symposium, pp. 361-364, Munich, Oct. 2003.
6. N. Constantin, and P.M. Ghannouchi, "GaAs FET's Gate Current Behavior and its Effects on RF Performance and Reliability in SSPAs," IEEE Trans. Microwave Theory Tech., vol. MTT-43, issue 12, pp. 2918-2925, Dec. 1995.