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1
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0029178525
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Novel circuit synthesis technique using short channel GaAs FET's giving reduced intermodulation distortion
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Seattle, WA
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Webster, D.R.1
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0032217896
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Pulse measurements quantify dispersion in pHEMT's
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Pisa, Italy, Sept. 29-Oct. 2
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Parker, A.E.1
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6344251586
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Observations on the effect of bias on pulsed I-V characteristics of MESFET's and HEMTs
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Manchester, U.K., Nov. 23-24
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D. R. Webster, A. E. Parker, and D. G. Haigh, "Observations on the effect of bias on pulsed I-V characteristics of MESFET's and HEMTs," in IEEE Int. High-Performance Electron Devices for Microwave Optoelectron. Applicat. Workshop, Manchester, U.K., Nov. 23-24, 1998, pp. 19-28.
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0030130259
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The effect of bias and load on MESFET nonlinear characteristics
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0027961880
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Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
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Analysis of intermodulation noise in frequency converters by Volterra series
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Modeling MESFET's for intermodulation analysis of mixers and amplifiers
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A realistic large-signal MESFET model for SPICE
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0029308532
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Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFETs
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May
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Angelov, I.1
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0030415379
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Pulsed device measurements and applications
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Dec.
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Scott, J.B.1
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