Asymmetric dielectric and ferroelectric behavior of CSD prepared ultrathin Sr0.8Bi22Ta2O9 films

Integrated Ferroelectrics

Volumn 47, Issue , 2002, Pages 227-233

  Jimenez R ^a   Alemany, C ^a   Gonzalez A ^a   Calzada, M L ^a   Mendiola, J ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Electrical asymmetry; Imprint; NVFeRAM; SBT; Ultrathin films

Indexed keywords

CAPACITORS; DIELECTRIC PROPERTIES; FERROELECTRICITY; INTERFACES (MATERIALS); RANDOM ACCESS STORAGE;

ELECTRICAL ASYMMETRY; MEMORY FAILURE; NVFERAM; STRONTIUM BISMUTH TANTALATE (SBT);

ULTRATHIN FILMS;

EID: 27644525564     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718285     Document Type: Article

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