Origin of imprint in ferroelectric CSD SrBi2Ta2O9 thin films

Materials Research Society Symposium - Proceedings

Volumn 541, Issue , 1999, Pages 269-274

  Grossmann, M ^a   Lohse, O ^a   Bolten, D ^a   Waser, R ^a,b   Hartner, W ^c   Schindler, G ^c   Nagel, N ^c   Dehm, C ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CRYSTALLIZATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; POLARIZATION; STRONTIUM COMPOUNDS;

FERROELECTRIC THIN FILM; POLED CAPACITOR;

THIN FILMS;

EID: 0032592335     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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