Photoluminescence of Eu doped ZnO structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5822, Issue , 2005, Pages 148-155

  Ursaki, Veaceslav ^a   Rusu, Emil ^a   Zalamai, Victor ^a   Sirbu, Lilian ^b   Monaico, Eduard ^b   Tiginyanu, Ion ^a,b  

^a INSTITUTE OF CHEMISTRY   (Moldova)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

Electron beam treatment; Intrashell transitions; Luminescence; Phosphors; Rare earth elements; Zinc oxide

Indexed keywords

DOPING (ADDITIVES); ELECTRON BEAMS; EUROPIUM; PHOSPHORS; PHOTOLUMINESCENCE; POWDERS; SODIUM COMPOUNDS; ZINC OXIDE;

E-BEAM PROCESSING; ELECTRON BEAM TREATMENT; INTRASHELL TRANSITIONS; MELTS;

NANOSTRUCTURED MATERIALS;

EID: 27644497203     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.612229     Document Type: Conference Paper

References (16)

1. S. J. Pearton, D. P Norton, K. Ip, Y. W. Heo, T. Steiner, "Recent advances in processing of ZnO", J. Vac. Sci. Technol. B 22, pp. 932-948, 2004.
2. M. Zamfirescu, A. Kavokin, B. Gill, G. Malpuech, M. Kaliteevski, "ZnO as a material mostly adapted for the realization of room-temperature polariton lasers", Phys. Rev. B 65, pp. 161205 (R)-161208 (R), 2000.
3. S. Y. Li, P. Lin, C. Y. Lee, T. Y. Tseng, "Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process". J. Appl. Phys. 95, pp. 3711-3722, 2004.
4. Y. B. Li, Y. Bando, D. Goldberg, "ZnO nanonedles with tip surface perturbations: Excellent field emitters", Appl. Phys. Lett. 84, pp. 3603-3605, 2004.
5. Z. -C. Jin, I. Hamberg, C. G. Granqvist, "Optical properties of sputter-deposited ZnO:Al thin films", J. Appl. Phys. 64, pp. 5117-5131, 1988.
6. Y. Hayashi, H. Narahara, T. Uchida, T. Noguchi, and S. Ibuki, Jpn. J. Appl. Phys., Part 1 34, 1878, 1995.
7. S. A. M. Lima, F. A. Sigoli, M. R. Davolos, and M. Jafelicci, J. Alloys Comp. 334, 280, 2002.
8. 3 phosphors", Appl. Phys. Lett. 72, pp. 668-670, 1998.
9. S. Fujihara, A. Suzuki, T. Kimura, "Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films", J. Appl. Phys. 94, pp. 2411-2416, 2003.
10. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strassburg, M. Dworzak, U. Haboeck, A.V. Rodina, "Bound exciton and donor-acceptor pair recombinations in ZnO", phys. stat. sol (b) 241, pp. 231-260, 2004.
11. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
12. 2 annealing effects", phys. stat. sol (b) 241, pp. 631-634, 2004.
13. P.Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer-Verlag, Berlin/Heidelberg/New York 1996.
14. y, films prepared by spray pyrolysis", Thin Solid Films 394, p. 263-270 (2001).
15. J. H. Kim and P. H. Holoway, "Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium", J. Appl. Phys. 95, pp. 4787-4790, 2004.
16. C. -W. Lee, H. O. Everitt, D. S. Lee, A. J. Stecke, J. M. Zavada, "Temperature dependence of energy transfer mechanisms in Eu-doped GaN", J. Appl. Phys. 95, pp. 7717-7724, 2004.