Verification of layout efficient shield-based de-embedding techniques for on-wafer HBT characterisation up to 30 GHz

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2005, Pages 119-124

  O'Sullivan, John A ^a   McCarthy, Kevin G ^a   Murphy, Aidan C ^b   Murphy, Patrick J ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

DE-EMBEDDING STRUCTURES; DEVICE CHARACTERIZATION; LOSSY NATURE;

MICROELECTRONICS;

EID: 27644480659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. T. E. Kolding, "Shield-Based Microwave On-Wafer Device Measurements," IEEE Transactions on Microwave Theory and Techniques, vol. 49, pp. 1039-1044, June 2001.
2. Hanjin Cho and Dorothea E. Burk, "A Three-Step Method for the De-Embedding of High-Frequency S-Parameter Measurements," IEEE Transactions on Electron Devices, vol. 38, pp. 1371-1375, June 1991.
3. Qingqing Liang, Cressler J.D., Guofu Niu, Yuan Lu, Freeman G., Ahlgren D.C., Malladi R.M., Newton K. and Harame D.L., "A Simple Four-Port Parasitic De-Embedding Methodology for High-Frequency Scattering Parameter and Noise Characterization of SiGe HBTs," IEEE Transactions on Microwave Theory and Techniques, vol. 51, pp. 2165 - 2174, November 2003.
4. Tiemeijer L.F. and Havens R.J., "A Calibrated Lumped-Element De-Embedding Technique For On-Wafer RF Characterization Of High-Quality Inductors and High-Speed Transistors," IEEE Transactions on Electron Devices, vol. 50, pp. 822-829, March 2003.
5. T.E. Kolding, "On-Wafer Calibration Techniques for Giga-Hertz CMOS Measurements," Proceedings of the 1999 International Conference on Microelectronic Test Structures, 1999, ICMTS, vol. 12, pp. 105-110, 15-18 March 1999.
6. Ryuichi Fujimoto, Kenji Kojima and Shoji Otaka, "A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier," IEEE Journal of Solid State Circuits, vol. 37, no. 7, pp. 852-856, July 2002.
7. Kirchgessner J., Bigelow S., Chai F. K., Cross R., Dahl P., Duvallet A., Gardner B., Griswold M., Hammock D., Heddleson J., Hildreth S., Irudayam A., Lesher C., Meixner T., Meng P., Menner M., McGinley J., Monk D., Morgan D., Rueda H., Small C., Stewart S., Ting M., To I., Welch P., Zirkle T, and Huang W.M., "A 0.18μm SiGe:C RF BiCMOS Technology for Wireless and Gigabit Optical Communication Applications," Proceedings Bipolar/BiCMOS Circuits and Technology Meeting, p. 151, September 2001.
8. T. E. Kolding, "A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS Measurements," IEEE Transactions on Electronic Devices, vol. 47, no. 4, pp. 734-740, April 2000.
9. Koolen, M.C.A.M., Geelen, J.A.M. and Versleijen, M.P.J.G., "An Improved De-Embedding Technique for On-Wafer High-Frequency Characterization, " Proceedings of the Bipolar Circuits and Technology Meeting, pp. 188-191, September 1991.