Analysis and modeling of curvature in copper-based mems structures fabricated using CMOS interconnect technology

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 1, Issue , 2005, Pages 764-767

  Eyoum, Marie Ange ^a,b   Hoivik, Nils ^a   Jahnes, Christopher ^a   Cotte, John ^a   Liu, Xiao Hu ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

ALD; BEOL; Copper damascene process; PVD

Indexed keywords

ALD; BACK-END-OF-LINE (BEOL) MATERIALS; BEOL; COPPER DAMACENE PROCESS;

CMOS INTEGRATED CIRCUITS; COPPER; MATHEMATICAL MODELS; OPTICAL INTERCONNECTS; PHYSICAL VAPOR DEPOSITION; STRESSES;

MICROELECTROMECHANICAL DEVICES;

EID: 27544513925     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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