Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation

Journal of Physics D: Applied Physics

Volumn 38, Issue 21, 2005, Pages 3926-3933

  Lo, K Y ^a  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARSENIC; CRYSTALLIZATION; ION IMPLANTATION; PHOSPHORUS; SECOND HARMONIC GENERATION; SEMICONDUCTING SILICON;

BOND ORBITAL; ELECTRICAL DIPOLES; IMPLANT DIFFUSION; IMPLANTATION DENSITY;

RAPID THERMAL ANNEALING;

EID: 27544502207     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/21/014     Document Type: Article

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