Activation and dopant sites of ultra-shallow implanted boron and arsenic in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 547-551

  Kobayashi, H ^a   Nomachi, I ^a   Kusanagi, S ^a   Nishiyama, F ^b  

^a SONY CORPORATION   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Arsenic; Boron; Channeling; Dopant site; Ion beam analysis; Ion implantation

Indexed keywords

ARSENIC; BORON; ION BEAMS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; THERMAL EFFECTS; X RAYS;

ION BEAM ANALYSIS;

SEMICONDUCTOR DOPING;

EID: 0036569083     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01227-7     Document Type: Conference Paper

References (8)