Post-CMOS process for high-aspect-ratio monolithically integrated single crystal silicon microstructures

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 2, Issue , 2005, Pages 1130-1133

  Zhu, Yong ^a   Yan, Guizhen ^a   Fan, Jie ^a   Liu, Xuesong ^a   Zhou, Jian ^a   Wang, Yang Yuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Bulk integration; Isolation trench; Post CMOS process

Indexed keywords

ASPECT RATIO; ETCHING; LEAKAGE CURRENTS; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; SENSORS; SILICON; SINGLE CRYSTALS;

BULK INTEGRATION; ISOLATION TRENCH; POST-CMOS PROCSS; REVERSE LEAKAGE;

CMOS INTEGRATED CIRCUITS;

EID: 27544480928     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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