Fabrication of highly oriented rubrene thin films by the use of atomically finished substrate and pentacene buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3740-3742

  Haemori, Masamitsu ^a   Yamaguchi, Jun ^a   Yaginuma, Seiichiro ^a   Itaka, Kenji ^a,b   Koinuma, Hideomi ^a,b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic force microscope (AFM); Field effect transistor (FET); Initial growth; Molecular beam epitaxy (MBE); Pentacene; Rubrene; Thin film; X ray diffraction (XRD)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; SAPPHIRE; VAPOR DEPOSITION;

CHEMICAL TREATMENTS; CRYSTALLINE FILMS; RUBRENE THIN FILMS; SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 23944505465     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3740     Document Type: Article

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