Electrical characteristics of thin silica layers nitrided by LPCVD nitrogen doped silicon

Solid-State Electronics

Volumn 41, Issue 7, 1997, Pages 951-955

  Temple Boyer, P ^a   Olivie, F ^a   Kassmi, K ^b   Scheid, E ^a   Sarrabayrouse, G ^a   Martinez, A ^a  

^a LAAS CNRS   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; MOS DEVICES; NITRIDING; NITROGEN; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICA; THIN FILMS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

DIELECTRIC FILMS;

EID: 0031187896     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00005-1     Document Type: Article

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