Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

Physica Status Solidi C: Conferences

Volumn 2, Issue 3, 2005, Pages 960-963

  Kakanakova Georgieva, A ^a   Kasic, A ^a   Hallin, C ^a   Monemar, B ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHONONS;

COMPOSITIONAL HOMOGENEITY; EPILAYERS; GAS-FLOW RATIO; INFRARED SPECTROSCOPIC ELLIPSOMETRY;

EPITAXIAL GROWTH;

EID: 27444438104     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460602     Document Type: Conference Paper

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