New concepts and preliminary results for SiC bipolar transistors: ZnSiN2 and ZnGeN2 heterojunction emitters

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 168-172

  Osinsky, A ^a   Fuflyigin, V ^a   Zhu, L D ^a   Goulakov, A B ^a   Graff, J W ^b   Schubert, E F ^b  

^a Corning Applied Technologies ^*  (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

EPITAXIAL LAYER; LATTICE MISMATCH; ZINC GERMANIUM NITRIDE; ZINC SILICON NITRIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034594128     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 2, (Soviet Radio, Moscow, 1974) pp. 44-47.
2. L.D. Zhu, P.H. Maruska, P.E. Norris, P.W. Yip, L.O. Bouthillette MRS Internet J. Nitride Semicond. Res. 4SI, G3.8 (1999)
3. S. Limpijumnong, S. N. Rashkeev, W.R.L. Lambrecht MRS Internet J. Nitride Semicond. Res. 4S1, G6.11 (1999)
4. Mintairov, J. Merz, A. Osinsky, V. Fuflyigin, L.D. Zhu. Appl. Phys. Lett., May 1, (2000)