An inductorless Ka-band SiGe HBT ring oscillator

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 10, 2005, Pages 682-684

  Kuo, Wei Min Lance ^a,b   Cressler, John D ^a,b   Chen, Yi Jan Emery ^a,c   Joseph, Alvin J ^a,d  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Heterojunction bipolar transistor (HBT); Inductorless; Ka band; Ring oscillator; Silicon germanium (SiGe)

Indexed keywords

INDUCTORLESS; KA-BAND; RING OSCILLATORS; SILICON-GERMANIUM (SIGE);

ELECTRIC INDUCTORS; ELECTRIC POWER UTILIZATION; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS;

OSCILLATORS (ELECTRONIC);

EID: 27144487421     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.856846     Document Type: Article

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