Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Cuevas, A ^a,b   Recart, F ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE EFFECTS; JUNCTION DEVICES; QUASI-STEADY-STATE (QSS) CONDITIONS; SPACE-CHARGE REGIONS;

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

SILICON WAFERS;

EID: 27144446666     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2073973     Document Type: Article

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