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Volumn , Issue , 2002, Pages 523-526

Properties of Cd and Zn partial electrolyte treated CIGS solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; COPPER ALLOYS; DEPOSITION; ELECTROLYTES; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; QUENCHING; ZINC;

EID: 0036956801     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (11)
  • 1
    • 0012569939 scopus 로고    scopus 로고
    • Polycrystalline thin film PV technologies: From the laboratory to commercialization
    • H.S. Ullal et al., "Polycrystalline Thin Film PV Technologies: From the Laboratory to Commercialization", Twenty eighth IEEE PVSC, Anchorage, 2000, pp 301-305.
    • Twenty Eighth IEEE PVSC, Anchorage, 2000 , pp. 301-305
    • Ullal, H.S.1
  • 4
    • 0001534708 scopus 로고    scopus 로고
    • 2 thin film solar cell heterojunction
    • 2 Thin film Solar Cell Heterojunction", Appl. Phys. Lett., 74, 1999, pp 1481-1483.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1481-1483
    • Heske, C.1
  • 5
    • 0000952730 scopus 로고    scopus 로고
    • High efficiency thin film solar cells without intermediate buffer layers
    • K. Ramanathan et al., "High Efficiency Thin Film Solar Cells Without Intermediate Buffer Layers", Second WCPEC, Wien, 1998, pp 477-481.
    • Second WCPEC, Wien, 1998 , pp. 477-481
    • Ramanathan, K.1
  • 6
    • 0000371289 scopus 로고    scopus 로고
    • Stabilization of manufacturing process of CIGS solar cell with treatment of CIGS surface by in and S containing solution
    • Y. Hashimoto et al., "Stabilization of Manufacturing Process of CIGS Solar Cell with Treatment of CIGS Surface by In and S Containing Solution", Jap. J. Appl. Phys. 39, 2000, pp 415-417.
    • (2000) Jap. J. Appl. Phys. , vol.39 , pp. 415-417
    • Hashimoto, Y.1
  • 9
    • 0012606431 scopus 로고    scopus 로고
    • Interface properties of CIGS(S)/buffer layers formed by the Cd-partial electrolyte process
    • this Conference.
    • P.K. Johnson et al., "Interface Properties of CIGS(S)/Buffer Layers Formed by the Cd-Partial Electrolyte Process", this Conference.
    • Johnson, P.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.