Field-effect transistors based on single-wall carbon nanotubes bundles

Chinese Journal of Electronics

Volumn 14, Issue 4, 2005, Pages 599-602

  Wang, Xiaofeng ^a,b   Guo, Ao ^a   Guan, Lunhui ^a   Shi, Zujin ^a   Gu, Zhennan ^a   Fu, Yunyi ^a   Zhang, Xing ^a   Huang, Ru ^a  

^a PEKING UNIVERSITY   (China)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Ambipolar; Carbon nanotubes bundle; Field effect transistors; Hysteresis

Indexed keywords

FABRICATION; FIELD EFFECT TRANSISTORS; HYSTERESIS; TRANSPORT PROPERTIES;

AMBIPOLAR; CARBON NANOTUBES BUNDLE; NANOSCALE FIELD-EFFECT TRANSISTORS (FET);

CARBON NANOTUBES;

EID: 27144432900     PISSN: 10224653     EISSN: 20755597     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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