Applied Physics: Shocks in ion sputtering sharpen steep surface features

Science

Volumn 310, Issue 5746, 2005, Pages 294-297

  Chen, H Henry ^a,c   Urquidez, Omar A ^b   Ichim, Stefan ^b   Rodriquez, L Humberto ^b   Brenner, Michael P ^b   Aziz, Michael J ^b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; IONS; SHOCK WAVES; SURFACE PHENOMENA;

ION IRRADIATION; ION SPUTTERING; THIN-FILM FLUID FLOWS;

SPUTTERING;

GALLIUM; ION; SILICON;

PHYSICS;

ARTICLE; FILM; FLUID FLOW; ION TRANSPORT; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; NANOTECHNOLOGY; PREDICTION; PRIORITY JOURNAL; RADIATION ENERGY; SHOCK DYNAMICS; SURFACE PROPERTY; THEORETICAL MODEL;

EID: 26844538256     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1117219     Document Type: Article

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30. We are grateful to H. Bola George and W. MoberlyChan for technical assistance. This research was supported by Harvard Materials Research Science and Engineering Centers (MRSEC) grant NSF-DMR-0213805, U.S. Department of Energy grant DE-FG02-01ER45947 (O.A.U.), and NSF grants NSF-DMR-0306997 (M.J.A.) and NSF-DMS-0296056 (M.P.B.). S.I. was partially supported by the Harvard College Research Fund. L.H.R. and S.I. were supported by the Research Experience for Undergraduates program (DMR-0353937) of the Harvard MRSEC.