A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density

IEEE Photonics Technology Letters

Volumn 17, Issue 10, 2005, Pages 2041-2043

  Snyman, Lukas W ^a,b   Aharoni, Herzl ^a,c   du Plessis, Monuko ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b TSHWANE UNIVERSITY OF TECHNOLOGY   (South Africa)

^c BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Complementary metal oxide semiconductor (CMOS) technology; Electroluminescence; Light emitting diodes (LEDs); Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTROLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

DOPING DENSITY; EXTERNAL QUANTUM EFFICIENCY; LIGHT INTENSITY;

LIGHT EMITTING DIODES;

EID: 26844529387     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.856448     Document Type: Article

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