Enhanced light emission from a silicon n+pn CMOS structure

Conference Proceedings - IEEE SOUTHEASTCON

Volumn 1999-March, Issue , 1999, Pages 242-245

  Snyman, Lukas W ^a   Biber, Alice ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b CSEM   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONVERSION EFFICIENCY; ELECTRIC FIELDS; INTELLIGENT SYSTEMS; LIGHT EMISSION; MONTE CARLO METHODS; BAND STRUCTURE; COMPUTER SIMULATION; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

2 MICRON; CHIP AREAS; CMOS STRUCTURES; CMOS TECHNOLOGY; ELECTRICAL-TO-OPTICAL CONVERSIONS; LED DEVICE; OPTICAL CONVERSION EFFICIENCY; OPTICAL EMISSION INTENSITY; SI-LEDS; THREE ORDERS OF MAGNITUDE;

SILICON; CMOS INTEGRATED CIRCUITS;

CONDUCTION BAND; ELECTRICAL TO OPTICAL QUANTUM CONVERSION EFFICIENCY;

EID: 0033346820     PISSN: 10910050     EISSN: 1558058X     Source Type: Conference Proceeding    
DOI: 10.1109/SECON.1999.766132     Document Type: Conference Paper

References (9)

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