Characterization of the InGaAs/InAlAs HEMT transit output response by using an electro-optical sampling technique

Journal of the Korean Physical Society

Volumn 47, Issue 3, 2005, Pages 520-524

  Kim, Seong Jin ^a   Itatani, T ^b   Sugaya, T ^b   Ogura, M ^b   Sugiyama, Y ^b  

^a Itswell Co Ltd   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

EO sampling; InGaAs InAlAs HEMT; Monolithic integration circuit; Optoelectronics; Photoconductive switch; Ultrafast device

Indexed keywords

EID: 26644468630     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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