Monolithic Integration of InAlAs/InGaAs/InP Enhancement- and Depletion-Mode High Electron Mobility Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 51-54

  Mahajan, A ^a   Fay, P ^a   Arafa, M ^a   Cueva, G ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CIRCUITS; CUTOFF FREQUENCY; ELECTRON MOBILITY; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ELECTRIC CURRENTS; NATURAL FREQUENCIES; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

DEPLETION MODES; EXTRINSIC TRANSCONDUCTANCE; GATE-LENGTH; HIGH ELECTRON-MOBILITY TRANSISTORS; INALAS/INGAAS/INP; INP MATERIAL; LATTICE-MATCHED; MATERIAL SYSTEMS; MONOLITHIC INTEGRATION; STANDARD DEVIATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

DEPLETION MODE; ENHANCEMENT MODE; GATE LENGTH; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; MONOLITHIC INTEGRATION;

EID: 0030399752     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553120     Document Type: Conference Paper

References (4)

1. N. Harada, S. Kuroda, T. Katakami, K. Hikoda, T. Mimura, and M.Abe, “Pt-based gate enhancement-mode InAlAsnnGaAs HEMTs for large-scale integration,” in Proc.J~dlnt. Cog. InP andRelatedMaterials, 1991, pp. 377-380.
2. K. Cben, T. Enoki,K.Maezawa, K. Ani,and M.Yamunoto, “High-PerformanceInP-Based Enhancement-Mode HEMT’s Using Non-Alloyed Ohmic Contacts and R-Based Buried-Gate Technologies,”IEEE Trans. Electron Dm’cw, 1996, vol. 43, no. 2, pp. 252-257.
3. A. Mahajan, M. Arafa, P.Fay, C. Caneau,and I. Adesida, “160 GHz Enhancement-ModeInAlAsnnGaAsAnPHigh Electron MobilityTransistor,”in Device Research Conference, 19%.
4. N. Harada, S. Kuroda, and K. Hikosaka, “N-InAlAsAnGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching,”IEICE Traru. Electron, 1992, v d. E75-C, no. 10, pp. 1165-1171.