DC and microwave characteristics of 0.2-μm T-gate double-doped metamorphic InAlAs/InGaAs/GaAs HEMTs recessed with succinic acid/H2O2

Journal of the Korean Physical Society

Volumn 41, Issue 4, 2002, Pages 528-532

  Shim, Jae Yeob ^a   Yoon, Hyung Sup ^a   Kim, Sung Jin ^a   Hong, Ju Yeon ^a   Chang, Woo Jin ^a   Kang, Dong Min ^a   Lee, Jin Hee ^a   Lee, Kyung Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

InAlAs InGaAs GaAs Metamorphic HEMT; Succinic acid; T gate

Indexed keywords

EID: 0035981416     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (10)

1. J.J. Berenz, K. Nakano, and K.P. Weller, IEEE Monolithic Circuits Symp. Dig. (1984), p. 83.
2. M. Abe, T. Mimura, N. Kobayashi, M. Suzuki, M. Kosugi and M. Nakayama, IEEE Trans. Electron Dev. 36, 2021 (1989).
3. Jin-Hee Lee, Hyun-Tae Choi, Chul-Wook Lee, Hyung-Sup Yoon, Byung-Sun Park and Chul-Soon Park, J. Korean Phys. Soc. 34, 150 (1999).
4. L.D. Nguyen, A.S. Brown, M.A. Thompson and L.M. Jelloian, IEEE Trans. Electron Dev. 39, 2007 (1992).
5. P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchard, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry and A.W. Swanson, Proc. 13th Conf. InP and Related Mater. (Nara, May, 2001), p. 9.
6. C.S. Whelan, P.F. Marsh, W.E. Hoke, R.A. MCTaggart, C.P. MCCarroll, and T.E. Kazior, Proc. 12th Conf. InP and Related Mater. (Virginia, May, 2000), p. 337.
7. A. Cappy, Y. Cordier, S. Bollaert, M. Zaknoune, Proc. 11th Conf. InP and Related Mater. (Davos, May, 1999), p. 217.
8. H.S. Yoon, J.H. Lee and K.Y. Lee, J. Korean Phys. Soc. 39, S275 (2001).
9. M. Tong, K. Nummila, A.A. Ketterson and I. Adesida, J. Electrochem. Soc. 139, L91 (1992).
10. C.S. Whelan, P.F. Marsh, W.E. Hoke and T.E. Kazior, 2000 GaAs MANTECH Conf. (Washington, DC, May, 2000), p. 237.