TEM characterization of La/B 4C multilayer systems by the geometric phase method

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 12, 2005, Pages 2299-2308

  Haussler D ^a   Spiecker, E ^a   Yang, S ^a,d   Jager W ^a   Stormer M ^b   Bormann, R ^b   Zwicker, G ^c  

^a UNIVERSITY OF KIEL   (Germany)

^b INSTITUTE OF MATERIALS RESEARCH   (Germany)

^c FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^d UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLACEMENT FIELDS; GEOMETRIC PHASE METHOD; MULTILAYER SYSTEMS; STRUCTURE PARAMETERS;

BARIUM; CHARACTERIZATION; LANTHANUM; MAGNETRON SPUTTERING; SILICON; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

MULTILAYERS;

EID: 26444461247     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521039     Document Type: Article

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