Spin diode in the ballistic regime

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 19, 2003, Pages

  Schmeltzer, D ^a   Saxena, A ^b   Bishop, R ^b   Smith, L ^b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ARTICLE; CALCULATION; DIODE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRONICS; ENERGY; MAGNETIC FIELD; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 2642556839     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.195317     Document Type: Article

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