메뉴 건너뛰기




Volumn 41, Issue 4 B, 2002, Pages 2501-2504

Conditions for the spin rectification phenomena predicted for semiconducting triple barrier structures in the presence of the rashba spin-orbit coupling

Author keywords

InGaAs InAlAs; Rashba spin orbit coupling; Resonant tunneling diode; Spin filter; Spin injection

Indexed keywords

RESONANT TUNNELING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

EID: 0037621146     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2501     Document Type: Article
Times cited : (7)

References (22)
  • 2
    • 0032573499 scopus 로고    scopus 로고
    • G. A. Prinz: Science 282 (1998) 1660.
    • (1998) Science , vol.282 , pp. 1660
    • Prinz, G.A.1
  • 19
    • 32444438125 scopus 로고    scopus 로고
    • note
    • The particular spin configuration in a system with the Rashba effect is discussed in ref. 15. In short, electron spins are oriented perpendicular to both the in-plane wave vector k|| and the electric field created by the potential profile of the heterostructure.
  • 22
    • 32444431566 scopus 로고    scopus 로고
    • T. Koga, J. Nitta, S. Datta and H. Takayanagi: unpublished (2001)
    • T. Koga, J. Nitta, S. Datta and H. Takayanagi: unpublished (2001).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.