MeV As and Au ion implantation in Si, GaP, GaAs, InSb and LiNbO3: Study of range and lattice location

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 111, Issue 3-4, 1996, Pages 234-243

  Kuri, G ^a   Sundaravel, B ^a   Rout, B ^a   Mahapatra, D P ^a   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC PHYSICS; ATOMS; CRYSTAL LATTICES; GOLD; IONS; LITHIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON;

ION ENERGIES; LATTICE LOCATION; LITHIUM NIOBATE; RANGE PROFILE; SUBSTITUTIONAL ATOMS; TILTED GEOMETRY; UNIVERSAL RANGE ENERGY THEORY;

ION IMPLANTATION;

EID: 0030146369     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01338-5     Document Type: Article

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