Electrical properties study of porous silicon layer prepared by electrochemical etching

Optical Materials

Volumn 28, Issue 1-2, 2006, Pages 143-146

  Korcala, Andrzej ^a   Bała, Wacław ^a   Bratkowski, Artur ^a   Borowski, Piotr ^a   Łukasiak, Zbigniew ^a  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

Admittance spectroscopy; Porous silicon

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTROCHEMISTRY; ETCHING; PHOTOCONDUCTIVITY; SPECTROSCOPIC ANALYSIS; VOLTAGE CONTROL;

ADMITTANCE SPECTROSCOPY; CONDUCTANCE-FREQUENCY; CURRENT-VOLTAGE; ELECTROCHEMICAL ETCHING;

POROUS SILICON;

EID: 25644459411     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.10.036     Document Type: Conference Paper

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