Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

Chemical Physics

Volumn 284, Issue 1-2, 2002, Pages 129-138

  Rao, P N ^a   Schiff, E A ^a   Tsybeskov, L ^b   Fauchet, P ^b  

^a SYRACUSE UNIVERSITY   (United States)

^b University of Rochester   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; CRYSTALLIZATION; ELECTRON TRANSPORT; LUMINESCENCE; MEASUREMENT; NANOPARTICLE; SAMPLING; TEMPERATURE DEPENDENCE;

EID: 0036830518     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0301-0104(02)00544-X     Document Type: Article

References (34)

1. L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
2. D.J. Lockwood (Ed.), Light Emission in Silicon: From Physics to Devices, Vol. 49 of Semiconductors and Semimetals, Academic Press, New York, pp. 206-252.
3. L. Brus, J. Phys. Chem. 98 (1994) 3575.
4. M.D. Mason, D.J. Sirbuly, P.J. Carson, S.K. Buratto, J. Chem. Phys. 114 (2001) 8119.
5. M.V. Wolkin, J. Jorne, P.M. Fauchet, G. Allan, C. Delerue, Phys. Rev. Lett. 82 (1999) 197.
6. X.J. Li, Y.H. Zhang, Phys. Rev. B 61 (2000) 12605.
7. A preliminary account of the present work has been given earlier: P.N. Rao, E.A. Schiff, L. Tsybeskov, P.M. Fauchet, in: R.W. Collins (Ed.), Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, Symposium Proceedings, vol. 452, Materials Research Society, Pittsburgh, 1997, p. 613.
8. H. Scher, M.F. Schlesinger, J.T. Bendler, Phys. Today 44 (1) (1991) 26.
9. M. Cruz, C. Wang, M.R. Beltran, J. Taguena-Martinez, Phys. Rev. B 53 (1996) 3827.
10. C. Soukoulis, Q. Li, G.S. Grest, Phys. Rev. B 45 (1992) 7724; A. Aharony, O. Entin-Wohlman, A. Brooks Harris, Physica A 200 (1993) 171; R. Berkovits, Yshai Avishai, Phys. Rev. B 53 (1996) R16125, are some of the references.
11. C. Soukoulis, Q. Li, G.S. Grest, Phys. Rev. B 45 (1992) 7724; A. Aharony, O. Entin-Wohlman, A. Brooks Harris, Physica A 200 (1993) 171; R. Berkovits, Yshai Avishai, Phys. Rev. B 53 (1996) R16125, are some of the references.
12. C. Soukoulis, Q. Li, G.S. Grest, Phys. Rev. B 45 (1992) 7724; A. Aharony, O. Entin-Wohlman, A. Brooks Harris, Physica A 200 (1993) 171; R. Berkovits, Yshai Avishai, Phys. Rev. B 53 (1996) R16125, are some of the references.
13. L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, P.M. Fauchet, in: D.J. Lockwood, P.M. Fauchet, N. Koshida, S.R.J. Burek (Eds.), Advanced Luminescent Materials, The Electrochemical Society, Pennington, 1996, p. 34.
14. Q. Gu, Q. Wang, E.A. Schiff, Y.-M. Li, C.T. Malone, J. Appl. Phys. 76 (1994) 2310.
15. A.J. Simons, in: L. Canham (Ed.), Properties of Porous Silicon, INSPEC, London, 1998, p. 176.
16. A. Fejfar, I. Pelant, E. Sipek, J. Kocka, G. Juska, T. Matsumoto, Y. Kanemitsu, Appl. Phys. Lett. 66 (1995) 1098, and references therein.
17. C. Peng, P.M. Fauchet, Appl. Phys. Lett. 67 (1995) 2515.
18. E.A. Lebedev, E.A. Smorgonskaya, G. Polisski, Phys. Rev. B 57 (1998) 14607.
19. T. Tiedje, B. Abeles, J.M. Cebulka, Solid State Comm. 47 (1983) 493, is representative; there are many papers on drift mobilities in amorphous silicon and related materials.
20. I. Mihalcescu, J.C. Vial, R. Romestain, Phys. Rev. Lett. 80 (1998) 3392.
21. D. Hoadley, P. McConville, N.O. Birge, Phys. Rev. B 60 (1999) 5617.
22. S. Friedrichowski, G. Dumpich, Phys. Rev. B 58 (1998) 9689.
23. C. Delerue, G. Allan, M. Lannoo, in: D.J. Lockwood (Ed.), Light Emission in Silicon: From Physics to Devices, Vol. 49 of Semiconductors and Semimetals, Academic, New York, 1998, p. 253 (recent review).
24. J. Diener, D. Kovalev, H. Heckler, G. Polisski, F. Koch, Phys. Rev. B 63 (2001) 73302.
25. M. Parkinson, S.C. Bayliss, D.T. Clarke, D. Law, G. Beamson, Thin Solid Films 326 (1998) 194.
26. B.B. Mandelbrot, The Fractal Geometry of Nature, Freeman, San Francisco, 1983.
27. Y. Gefen, A. Aharony, S. Alexander, Phys. Rev. Lett. 50 (1983) 77.
28. T. Nakayama, K. Yakubo, R. Orbach, Rev. Mod. Phys. 66 (1994) 381.
29. S. Alexander, R. Orbach, J. Phys. (Paris) Lett. 43 (1982) L-625.
30. R. Rammal, G. Toulouse, J. Phys. (Paris) Lett. 44 (1983) L13.
31. J.P. Bouchaud, A. Georges, Phys. Rep. 195 (1990) 127.
32. Q. Gu, E.A. Schiff, S. Grebner, F. Wang, R. Schwarz, Phys. Rev. Lett. 76 (1996) 3196.
33. A.I. Yakimov, N.P. Stepina, A.V. Dvurechenskii, L.A. Shcherbakova, JETP 85 (1997) 501.
34. M. Ben-Chorin, F. Moller, F. Koch, W. Schirmacher, W.M. Eberhard, Phys. Rev. B 51 (1995) 2199.