Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1225-1226

  Too, P ^a   Ahmed, S ^a   Jeynes, C ^a   Sealy, B J ^a   Gwilliam, R ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

IRON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TEMPERATURE;

ELECTRICAL ISOLATION; IRON IMPLANTATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037179912     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020803     Document Type: Article

References (10)

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3. DONNELLY, J.P., and HURWITZ, C.E. 'High-resistivity layers in n-InP produced by Fe ion implantation', Solid-State Electron., 1978, 21, pp. 475-478
4. PEARTON, S.J., ABERNATHY, C.R., PANISH, M.B., HAMM, R.A., and LUNARDI, L.M.: 'Implant induced high-resistivity regions in InP and InGaAs', J. Appl. Phys., 1989, 66, pp. 656-662
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8. THOMPSON, P.E., BINARI, S.C., and DIETRICH, H.B.: 'Damage-induced isolation in n-type InP by light-ion implantation', Solid-State Electron., 1983, 26, pp. 805-810
9. FRIGERI, C., CARNERA, A., FRABONI, B., GASPAROTTO, A., CASSA, A., PRIOLO, F., CAMPORESE, A., and ROSSETTO, G.: 'Defect characterisation in InP substrates implanted with 2 MeV Fe ions', Mater. Sci. Eng., 1997, B44, pp. 193-197
10. AHMED, S., KNIGHTS, A.P., GWILLIAM, R., and SEALY, B.J.: 'The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation', Semicond. Sci. Technol., 2001, 16, pp. L17-L19