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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 125-130

Implant isolation of InP and InGaAs by proton irradiation at variable doses and substrate temperatures

(4) Too, P a Ahmed, S a Gwilliam, R a Sealy, B J a

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; HALL EFFECT; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; PROTON IRRADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CONDUCTIVE LAYER; DAMAGE DENSITY; DYNAMIC ANNEALING; IMPLANT ISOLATION; SHEET RESISTANCE; SUBSTRATE TEMPERATURE; THRESHOLD DOSE;

ION IMPLANTATION;

EID: 0035575130 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.