GISAXS characterization of Ge islands on Si(1 0 0) substrates

Vacuum

Volumn 80, Issue 1-3, 2005, Pages 69-73

  Kovacevic I ^a   Dubcek P ^a   Zorc, H ^a   Radic N ^a   Pivac, B ^a   Bernstorff, S ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

Germanium; GISAXS; Nanostructures; Silicon

Indexed keywords

EVAPORATION; GERMANIUM; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCATTERING; SILICON; VACUUM; X RAYS;

GISAXS; HIGH-VACUUM EVAPORATION;

SUBSTRATES;

EID: 25444531659     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.07.027     Document Type: Conference Paper

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