Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown on Si(100) substrates

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 265-268

  Chassagne, T ^c   Ferro, G ^b   Haas, H ^c   Leycuras, A ^c   Mank, H ^a   Monteil, Y ^b  

^a SAVOIE TECHNOLAC   (France)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^c CRHEA CNRS   (France)

Author keywords

3C SiC heteroepitaxy; Bending; Carbonization; SiO2 patterning

Indexed keywords

ATOMIC FORCE MICROSCOPY; BENDING (DEFORMATION); CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; MORPHOLOGY; POLISHING; SHEAR STRESS; SILICA; THERMAL EXPANSION;

3C-SIC HETEROEPITAXY; CARBONIZATION TEMPERATURE; SIO2 PATTERNING; TENSILE STRAIN;

SILICON CARBIDE;

EID: 8744229795     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.265     Document Type: Conference Paper

References (3)

1. T. Chassagne, G. Ferro, C. Gourbeyre, M. Le Berre, D. Barbier and Y. Monteil, Materials Science Forum, vols. 353-356 (2001) 155-158
2. T. Chassagne, G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil and J. Bouix, Thin Solid Films 402 (2002) 83-89
3. C. Jacob, P. Pirouz and S. Nishino, Materials Science Forum Vols 353-356 (2001) 127-130.