High purity alpha silicon nitride nanowires - Synthesis and dielectric properties

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 10, 2005, Pages 1919-1924

  Xie, T ^a,b   Wu, Y C ^a,b   Cai, W P ^b   Zhang, L D ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; ROOM TEMPERATURE; VAPOR PHASE REACTION; VAPOR SOLID (VS) MECHANISM;

CATALYSTS; DIELECTRIC PROPERTIES; GROWTH (MATERIALS); SILICON NITRIDE; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

EID: 25444465957     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200520044     Document Type: Article

References (32)

1. H. Pierson, Handbook of Refractory Carbides and Nitrides (Noyes Publications, Westwood, New Jersey, 1996).
2. G. Ziegler, J. Heinrich, and G. Wötting, J. Mater. Sci. 22, 3041 (1987).
3. D. Muscat, M. D. Pugh, R. A. L. Drew, H. Pickup, and D. Steele, J. Am. Ceram. Soc. 75, 2713 (1992).
4. K. Kijima, N. Setaka, and H. Tanaka, J. Cryst. Growth 24/25, 183 (1974).
5. S. Motojima, T. Yamana, T. Araki, and H. Iwanaga, J. Electrochem. Soc. 142, 3141 (1995).
6. Y. Inomata and T. Yamana, J. Cryst. Growth 21, 317 (1974).
7. P. S. Gopalakrishnan and P. S. Lakshminarsimham, J. Mater. Sci. Lett. 12, 1422 (1993).
8. M. J. Wang and H. Wada, J. Mater. Sci. 25, 1690 (1990).
9. P. D. Ramesh and K. J. Rao, J. Mater. Res. 9, 2330 (1994).
10. M. A. Rodriguez, N. S. Makhonin, J. A. Escrina et al., Adv. Mater. 7, 745 (1995).
11. Y. G. Cao, C. C. Ge, Z. J. Zhou, and J. T. Li, J. Mater. Res. 14, 876 (1999).
12. T. Hashishin, Y. Kaneko, H. Iwanaga, and Y. Yamamoto, J. Mater. Sci. 34, 2193 (1999).
13. W. Han, S. Fan, Q. Li, B. Gu, X. Zhang, and D. Yu, Appl. Phys. Lett. 71, 2271 (1997).
14. X. C. Wu, W. H. Song, B. Zhao, W. D. Huang, M. H. Pu, Y. P. Sun, and J. J. Du, Solid State Commun. 115, 683 (2000).
15. L. D. Zhang, G. W. Meng, and F. Phillipp, Mater. Sci. Eng. A 286, 34 (2000).
16. Gautam Gundiah, G. V. Madhav, A. Govindaraj, Md. Motin Seikh, and C. N. R. Rao, J. Mater. Chem. 12, 1606 (2002).
17. Y. Zhang, N. Wang, R. He, J. Liu, X. Zhang, and J. Zhu, J. Cryst. Growth 233, 803 (2001).
18. H. Cui and B. R. Stoner, J. Mater. Res. 16, 3111 (2001).
19. H. Y. Kim, J. Park, and H. Yang, Chem. Phys. Lett. 372, 269 (2003).
20. Y. Zhang, N. Wang, R. He, Q. Zhang, J. Zhu, and Y. Yan, J. Mater. Res. 15, 1048 (2000).
21. R. D. Gould and S. A. Awan, Thin Solid Films 433, 309 (2003).
22. C. Ye, Z. Y. Ning, M. R. Shen et al., J. Appl. Phys. 83, 5978 (1998).
23. A. Sazonov, D. Stryahilev, A. Nathan et al., J. Non-Cryst. Solids 299, 1360 (2002).
24. T. Wang, L. Zhang, and J. Mou, Chin. Phys. Lett. 10(11), 676 (1993).
25. D. J. Bergman, Phys. Rep. 43, 377 (1978).
26. J. Monecke, J. Phys.: Condens. Matter 6, 907 (1994).
27. A. Q. Jiang, G. H. Li, and L. D. Zhang, J. Appl. Phys. 83, 4878 (1998).
28. C. Mo, L. Zhang, and G. Wang, Nanostruct. Mater. 6, 823 (1995).
29. R. Tsu, D. Babic, and L. Ioriatti, J. Appl. Phys. 82, 1327 (1997).
30. S. M. Zhou, Y. S. Feng, and L. D. Zhang, Chem. Phys. Lett. 369, 610 (2003).
31. T. J. Lewis, J. Phys. D, Appl. Phys. 38, 202 (2005).
32. T. Wang, L. Zhang, X. Fan, J. Hu, and J. Mo, J. Appl. Phys. 74, 6313 (1993).