Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

Thin Solid Films

Volumn 458, Issue 1-2, 2004, Pages 227-232

  Dreeskornfeld, L ^a   Haindl, G ^a   Kleineberg, U ^a   Heinzmann, U ^a   Shi, F ^b,f   Volland, B ^b   Rangelow, I W ^b   Majkova, E ^c   Luby, S ^c   Kostic, ^d   Matay, L ^d   Hrkut, P ^d   Hudek, P ^d,g   Lee, Hsin Yi ^e  

^a BIELEFELD UNIVERSITY   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

^c INSTITUTE OF PHYSICS   (Slovakia)

^d INSTITUTE OF INFORMATICS   (Slovakia)

^e NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^f INFINEON TECHNOLOGIES AG   (Germany)

^g Fa Leica   (Germany)

Author keywords

Molybdenum; Multilayers; Nanostructures; Silicon

Indexed keywords

DEFECT GENERATION; MULTILAYER ETCHING PROCESS; NANOSTRUCTURES; THREE-LEVEL MASKS;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CONTAMINATION; EVAPORATION; MULTILAYERS; NANOSTRUCTURED MATERIALS; REACTIVE ION ETCHING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MOLYBDENUM;

EID: 2542488696     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.070     Document Type: Article

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