T-shaped gate based on poly Si/polyimide supported layers

ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems

Volumn 1998-October, Issue , 1998, Pages 183-186

  Lalinsky, T ^a   Hrkut, P ^b   Matay, L ^b   Kostic, I ^b   Hascik, S ^a   Hudek, P ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MICROSYSTEMS; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM; THERMODYNAMIC STABILITY;

BILAYER SYSTEMS; BREAKDOWN PROPERTY; DIRECT WRITING; GAAS SUBSTRATES; POLYIMIDE LAYERS; T-SHAPED GATE;

SEMICONDUCTOR DEVICES;

EID: 2542478315     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.1998.730194     Document Type: Conference Paper

References (9)

1. S. Takamiya, N. Yoshida, N. Hayafuji, and S. Mitsui, Solid-St. Electron 38, 158 1, 1995.
2. M. Matsumura, K. Tsutsui, and Y. Naruke, Electron Lett. 12,429, 1981.
3. P.C. Chao, P.M. Smith, and J.C.M. Hwang, ZEEE Trans. Electron Devices 32, 1042, 1985.
4. J-H Lee, H-S Yoon, Ch-S Park, and H-M Park, IEEE EZectron Device Lett. 16,271, 1995.
5. H. Takano, H. Nakano, Y. Hirose, and N. Tsubouchi, JO Vac. Sci. Technol. 14,3483, 1996.
6. L.-W. Yin, N.X. Nguyen, A.C Gossard, and U.K. Mishra, Electron Lett. 23, 1550, 1993.
7. D. Thkroii, B. Bonte, and Y. Crosnier, ZEEE Trans. Electron Devices 40, 1935, 1993.
8. C. Gaquicre, B. Bonte, 'and T. Pacou, IEEE Trans: Elcch-on Devices 42,209, 1995.
9. T. Suemitsu, T. Enoki, H. Yokoyama Y. Umeda, and Y. Ishii, Electron Lett. 34,220,1998.