Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65 nm device node

Journal of Microlithography, Microfabrication and Microsystems

Volumn 3, Issue 2, 2004, Pages 276-283

  Montgomery, Patrick K ^a   Litt, Lloyd C ^a   Conley, Will ^a   Lucas, Kevin ^b   Van Wingerden, Johannes ^c   Vandenberghe, Geert ^d   Wiaux, Vincent ^d  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d IMEC   (Belgium)

Author keywords

Lithography; Masks; Phase shifts

Indexed keywords

EDGE RESISTS; METAL LAYERS; PROCESS MARGINS; SIDELOBE PRINTING;

ATTENUATION; COMPUTER SIMULATION; IMAGE ANALYSIS; LIGHT TRANSMISSION; PHASE SHIFT;

MASKS;

EID: 2542456858     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1669524     Document Type: Article

References (6)

1. W. Conley et al., "Mighty high-T lithography for 65 nm generation contacts," Proc. SPIE 5040, 1210-1219 (2003).
2. N. Kachwala et al., "High transmission attenuated PSM benefits and limitations through a validation study of 33%, 20% and 6% transmission masks," Proc. SPIE 4000, 1163-1174 (2000).
3. J. van Wingerden, P. Dirksen, C. Juffermans, and Y. Trouiller, "Lithographic process optimization using process capability analysis," Proc. SPIE 5040, 882-893 (2003).
4. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA).
5. K. Lucas et al., "Process, design and optical proximity correction requirements for the 65 nm device generation," Proc. SPIE 5040, 408-419 (2003).
6. 1 back-end imaging," Proc. SPIE 5040, 270-281 (2003).