Lithographic process optimization using process capability analysis

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 II, Issue , 2003, Pages 882-893

  Van Wingerden, Johannes ^a   Dirksen, Peter ^a   Juffermans, Casper ^a   Trouiller, Yorick ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b CEA GRENOBLE   (France)

Author keywords

Cpk; Compact models; OPC; Optical lithography; Process latitudes; Process optimisation

Indexed keywords

MASKS; MATHEMATICAL MODELS; MONTE CARLO METHODS; OPTIMIZATION; STATISTICAL PROCESS CONTROL;

PROCESS CAPABILITY; PROCESS LATITUDES; PROCESS OPTIMIZATION;

PHOTOLITHOGRAPHY;

EID: 0141722277     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485520     Document Type: Conference Paper

References (4)

1. E. Charrier and C. Mack, "Yield modeling and enhancement for optical lithography," Optical/Laser Microlithography VIII, Proc., SPIE 2440, pp. 435-447, 1995.
2. Z. Krivokapic, W. Heavlin, and D. Kyser, "Process capabilities of critical dimensions at gate mask," Optical/Laser Microlithography VIII, Proc., SPIE 2440, pp. 480-491, 1995.
3. K. Ronse, R. Pforr, M. op de Beeck, and L. van den Hove, "Cd control: The limiting factor for i-line and deep-uv lithography," OCG Microlithography Seminar, Proc., pp. 241-254, 1995.
4. S. Lis, "Parametric analysis of the cd control obtained using advanced wafer steppers," Micron and Submicron Integrated Circuit Metrology, Proc., SPIE 565, pp. 143-151, 1985.